Abstract Virtually complete charge transfer can be achieved with charge coupleddevices(CCDs)intheburiedchannelconfigurationbecausetheburiedchannelCCDintroduces no transfer noise. However, conventional charge detectors incorporatedinto CCDs have a comparably large noise, which consists of thermal noise and 1/fnoisefromMOS transistorin theoutputchargedetectors.
10Low-NoiseElectronicImagingwithDouble-GateFETs
Fig.10.12Charge/voltage
conversioncharacteristics
1
Output voltage [V]22910-110-210
-3
10-4
1101102103104
Number of electrons
[electrons / packet]
Fig.10.13Noisespectraof
oatingsurfacedetectorin
resetoperationandintransfer
operation
rmsnoisevalue,withinthefrequencyrangeof10kHz–3.58MHz,is84 Vrmsatroomtemperature.
Thenoiselevelof84 Vrmsandasignaldutyratioof75%resultinaneffectivereadoutnoiseofaslowas0.5electron.Thus,thedynamicrangeisaswideas79dB.Inthesignalrangebelow20electrons,chargegenerationbyphotoelectricconversioneffectintheCCDwithweakincidentlightthroughaneutraldensity(ND) lterisinducedtoevaluatethedetector,asshowninFig.10.14.Injectionpacketsizeinthesensingchannelisknowninadvancebythismethod.Asignalpacketoftenelectronsismadebyinsertinga10 2ND lterinthelightpath.Thelightintensityissetsoastogenerate1,000electrons/packet,whichismeasuredusingthecurrentmeterinthe gure.Figure10.15ashowswaveformsoftheRSinputpulse,a¥1inputpulse,andtheresultantoutputsignal.Figure10.15bisa
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