基于单片机的数字时钟设计--外文翻译(13)

Abstract Virtually complete charge transfer can be achieved with charge coupleddevices(CCDs)intheburiedchannelconfigurationbecausetheburiedchannelCCDintroduces no transfer noise. However, conventional charge detectors incorporatedinto CCDs have a comparably large noise, which consists of thermal noise and 1/fnoisefromMOS transistorin theoutputchargedetectors.

10Low-NoiseElectronicImagingwithDouble-GateFETs231

Output voltage [mV]21

0510

Packet size [electrons]15

Fig.10.16Charge/voltageconversioncharacteristicsobtainedbydiscretelevel

observation

Fig.10.17Charge/voltageconversioncharacteristics.(a)Double-gatetransistor.(b)Thin-gate-oxidetransistor(c)Thick-gate-oxidetransistor

10.2.2.4Discussion

ThedetectiontransistoristheP-channelsurfacetransistorwiththesensingchannelastheburiedgate.Here,thegateelectrodestructuresinthetransistorarediscussed.Figure10.17a–cshowssource-followerdiagramsusingthedouble-gatetransistor,athin-gate-oxidetransistor,andathick-gate-oxidetransistor,respectively.Theoxidethicknessesofthetransistorsare120and1,000nm,respectively.ThesamevoltageastheRDvoltageisappliedtotheburiedgatebyswitchingtheneighboringRSgateon.Figure10.18showstheburied-gatevoltageversustheoutputvoltageofthesourcefollowers.Thesource-followergainsareobtainedbytheslopesofcurves(a)–(c)inthe gure.Theyare0.78,0.31,and0.49,respectively.Intheburied-gatevoltagerangeof13–15V,theoutputvoltagesoftypes(a)and(b)aresaturated.

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