基于单片机的数字时钟设计--外文翻译(3)

Abstract Virtually complete charge transfer can be achieved with charge coupleddevices(CCDs)intheburiedchannelconfigurationbecausetheburiedchannelCCDintroduces no transfer noise. However, conventional charge detectors incorporatedinto CCDs have a comparably large noise, which consists of thermal noise and 1/fnoisefromMOS transistorin theoutputchargedetectors.

10Low-NoiseElectronicImagingwithDouble-GateFETs

Fig.10.1Planeviewof

conventional oating

diffusioncharge

detector221

Fig.10.2Plainviewofnew

oatingwell

detector

[2,3].Figure10.3showsacross-sectionalviewofthedetectiontransistoracrossthesensingchannel.Ashallowp-wellwithasensingchannelinitandsource/drainpCregionsareformedonann-typesubstrate.TheholecurrentintheP-channeldetectiontransistorismadeto ownotalongthesilicon–silicondioxideinterfacebutratherunderneaththesensingchannel.Asaresult,suppressionof1=fnoisewhichiscausedbysilicon–silicondioxidetrapscanbeexpected.ChargepacketsclockedalongtheCCDchannelaretransferredintothesensingchannel.Thechargepacketsdirectlymodulatethechannelconductanceinthedetectiontransistor.

Thesensingcapacitanceforthedetectiontransistorcanbesmallerthanthatforthewidelyused“ oatingdiffusiondetector.”Thesmallsensingcapacitancehasbeenachievedbythesmallersensingregion,inwhichthesensingchannelandtheP-typechannelforthedetectiontransistorarecrossed.Moreover,a“double-gatestructure”isintroducedforsmallersensingcapacitance.Inthisstructure,a1,000nm

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