基于单片机的数字时钟设计--外文翻译(4)

Abstract Virtually complete charge transfer can be achieved with charge coupleddevices(CCDs)intheburiedchannelconfigurationbecausetheburiedchannelCCDintroduces no transfer noise. However, conventional charge detectors incorporatedinto CCDs have a comparably large noise, which consists of thermal noise and 1/fnoisefromMOS transistorin theoutputchargedetectors.

222Y.

MatsunagaFig.10.3Cross-sectionof oatingwelldetection

transistor

Fig.10.4Practical oatingwellchargedetectorfabricatedinshallowp-wellonn-typesubstratethickoxideisemployedforthedetectiontransistor’sgateoxide.A atpotentialplate(FPP),whichis oatingelectrically,isinsertedunderthedetectiontransistorgate(G).TheFPPsuppressesthetwo-dimensionaleffectwhichcausesapotentialpocketinthesensingchannel.Thetransferlossinducedbyapotentialpocketresultsintransfernoiseinthedetector.

Figure10.4showsapracticaloutputampli erfordetectingthecharge(electron)packetstransferredinathree-phaselinearCCDwhichisfabricatedinashallowp-wellonthen-typesubstrateof45 cmresistivity.Thepotentialcontrolgate(G)areawiththethickgateoxidelayermeasures5 5 m2,andthethingatelayerundertheFPPis93nmthick.ToformtheP-typechannelforthedetectiontransistor,alocaldeepboronimplantationthesensingchannelisrequired.Figure10.5shows

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